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| SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 3 APRIL 1996 FEATURES * hFE up to 5k at Ic= 500mA * Fast switching * Low VCE(sat) at High Ic PARTMARKING DETAILS 614 FMMT614 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO MIN. 120 100 10 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. 300 130 14 0.02 10 10 100 0.9 0.78 1.7 1.5 15K 5K 6 0.7 2.5 pF s s VALUE 120 100 10 2 500 500 -55 to +150 UNIT V V V A mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). MAX. UNIT V V V nA A CONDITIONS. IC=10A, IE=0 IC=10mA, IB=0* IE=10A, IC=0 VCB=100V, IE=0 VCES=100V, IE=0 VEB=8V, IC=0 IC=500mA, IB=5mA* IC=100mA, IB=0.1mA IC=500mA, IB=5mA* IC=500mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* VCB=10V, f=100mHz IC=100A, IB=0.1mA VS=10V Collector Cut-Off Current ICBO Collector Cut-Off Current ICES Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Output Capacitance Switching Times IEBO VCE(sat) VBE(sat) VBE(on) hFE Cobo ton toff nA V V V V 1.0 0.9 1.9 1.8 *Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2% Spice parameter data is available upon request for this device Typical Characteristics graphs are in preparation. Contact your local Sales office for more information. 3 - 147 FMMT614 TYPICAL CHARACTERISTICS 2 +25C 2 I+/I*=1000 1 I+/I*=1000 I+/I*=2000 I+/I*=5000 1 -55C +25C +100C +150C 0 1m 10m 100m 1 10 0 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC 75k V+-=5V +100C +25C -55C VCE(sat) v IC 2.4 I+/I*=1000 50k 1.2 25k -55C +25C +100C +150C 0 1m 10m 100m 1 10 0 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) hFE v IC 2 V+-=5V VBE(sat) v IC 10 1 1 -55C +25C +100C +150C 0.1 0.01 0.001 10m DC 1s 100ms 10ms 1ms 100s 0 1m 10m 100m 1 10 100m 1 10 100 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area PAGE NUMBER |
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